BSV79
2V,7V,50mA,350mW Through-Hole JFET N Channel
Specifications
Case Type
TO-18
Common Source Input Capacitance (Ciss)
5 pF
Common Source Reverse Transfer Capacitance (Crss)
10 pF
Continuous Gate Current
50 mA
Drain Current-Off (ID(OFF))
500000 pA
Drain Current-Off (ID(OFF))
250 pA
Drain-Gate Voltage
40 V
Drain-Source On Resistance (rds(ON))
40 Ω
Drain-Source On Voltage (VDS(ON))
400 mV
Drain-Source Voltage
40 V
ECCN Code
EAR99
Gate Leakage Current (IGSS)
500 nA
Gate Leakage Current (IGSS)
0.25 nA
Gate-Source Cutoff Voltage (VGS(OFF))
2 — 7 V
Gate-Source Voltage (VGS)
40 V
Gate-Source Voltage (VGS)
1.75 — 6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 175 °C
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
20000 µA
Storage Temperature (Tstg)
-65 — 175 °C
Thermal Resistance Junction-Ambient
430 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 2V,7V,50mA,350mW Through-Hole JFET N Channel | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| BSV79_80.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product EOL Notice:JFETS | Product EOL Notice |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |