BSX62-10
40V,3A,5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.3 V
Base-Emitter On Voltage (VBE(ON))
1 V
Base-Emitter On Voltage (VBE(ON))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
800 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
3 A
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
63 — 160 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
70 pF
Power Dissipation
5 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
35 °C/W
Turn Off Time (toff)
4000 ns
Turn On Time (ton)
300 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 40V,3A,5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| BSX62_63.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product EOL Notice:BFX34 | Product EOL Notice |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |