BSY18
12V,200mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Case Type
TO-18
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Voltage
20 V
Collector-Emitter Breakdown Voltage (BVCEO)
12 V
Collector-Emitter Saturation Voltage (VCE(SAT))
280 mV
Collector-Emitter Voltage (VCEO)
12 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
280 MHz
DC Current Gain (hFE)
40 — 120 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
5 pF
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
24 ns
Turn On Time (ton)
16 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 12V,200mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP058.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Process Change Notice:CP207 replaced by CP396V | Process Change Notice |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |