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AEM

BSY54

30V,750mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
750 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
7 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
23 pF
Input Impedance Common Emitter (hie)
0.0016 — 0.009 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
8 dB
Output Admittance Common Emitter (hoe)
4.5 — 12.5 µS
Output Capacitance (Cob)
10 pF
Power Dissipation
3 W
Power Dissipation
800 mW
Small Signal Current Gain (hfe)
50 — 250 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Voltage Feedback Ratio Common Emitter (hre)
0.3 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active30V,750mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High CurrentBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP067.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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