BU208
700V,8A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-3
Collector-Emitter Breakdown Voltage (BVCEO)
700 V
Collector-Emitter Cutoff Current (ICES)
2000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Voltage (VCEO)
700 V
Collector-Emitter Voltage (VCES)
1500 V
Continuous Collector Current
8 A
Current Gain-Bandwidth Product (fT)
7 MHz
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
10 V
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
10 V
Fall Time Inductive (tf)
0.55 µs
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 175 °C
Peak Collector Current
15 A
Power Dissipation
150 W
Storage Temperature (Tstg)
-65 — 175 °C
Storage Time Inductive (ts)
7 µs
Thermal Resistance Junction-Case
1 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued, Stock Only | 700V,8A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| BU208_SERIES.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |