BU408
200V,7A,60W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-220
Collector-Base Voltage
400 V
Collector-Emitter Cutoff Current (ICES)
100 µA
Collector-Emitter Cutoff Current (ICES)
1000 µA
Collector-Emitter Cutoff Current (ICES)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
200 V
Collector-Emitter Voltage (VCES)
400 V
Continuous Base Current
4 A
Continuous Collector Current
7 A
Current Gain-Bandwidth Product (fT)
10 MHz
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
400 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
80 pF
Peak Collector Current
15 A
Power Dissipation
60 W
Second Breakdown Collector Current (Is/b)
6 A
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
70 °C/W
Thermal Resistance Junction-Case
2.08 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 200V,7A,60W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 50 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| BU406-408.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |