BUW36
450V,10A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-3
Collector-Emitter Breakdown Voltage (BVCEO)
450 V
Collector-Emitter Cutoff Current (ICES)
500 µA
Collector-Emitter Cutoff Current (ICES)
3000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
450 V
Collector-Emitter Voltage (VCES)
900 V
Continuous Base Current
5 A
Continuous Collector Current
10 A
DC Current Gain (hFE)
15 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
125 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
1.4 °C/W
Turn Off Time (toff)
3800 ns
Turn On Time (ton)
700 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 450V,10A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| BUW34_SERIES.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |