BUX80
10A,400V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Case Type
TO-3
Collector-Emitter Breakdown Voltage (BVCER)
500 V
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICES)
1000 µA
Collector-Emitter Cutoff Current (ICES)
3000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (VCER)
500 V
Collector-Emitter Voltage (VCES)
800 V
Continuous Base Current
5 A
Continuous Collector Current
10 A
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000000 nA
Emitter-Base Voltage
10 V
Fall Time (tf)
500 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
15 A
Power Dissipation
100 W
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
3500 ns
Thermal Resistance Junction-Case
1.1 °C/W
Turn On Time (ton)
500 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 10A,400V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| LSSGP084.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |
| Spice Model:Spice Model BUX80 | Spice Model |