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AEM

BUY48

170V,7A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
200 V
Collector-Base Cutoff Current (ICBO)
1000000 nA
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
200 V
Collector-Emitter Breakdown Voltage (BVCEO)
170 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
450 mV
Collector-Emitter Voltage (VCEO)
170 V
Continuous Collector Current
7 A
Current Gain-Bandwidth Product (fT)
90 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
80 pF
Peak Collector Current
10 A
Power Dissipation
10 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
15 °C/W
Turn Off Time (toff)
2000 ns
Turn On Time (ton)
1000 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active170V,7A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN High VoltageBox500LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
BUY47_48.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model BUY48Spice Model

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