BUY69A
400V,10A,100W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
2.2 V
Case Type
TO-3
Collector-Base Breakdown Voltage (BVCBO)
1000 V
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICES)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3300 mV
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (VCES)
1000 V
Continuous Base Current
3 A
Continuous Collector Current
10 A
DC Current Gain (hFE)
15 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
8 V
Fall Time (tf)
1000 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current
15 A
Power Dissipation
100 W
Second Breakdown Collector Current (Is/b)
4 A
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 400V,10A,100W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| LSSGP084.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Process Change Notice:2N6545 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |