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CDFM10-600N
10A,600V Surface mount MOSFET N-Channel Enhancement Mode High Current
Specifications
Case Type
DFN5X6
Common Source Input Capacitance (Ciss)
800 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
3 pF
Continuous Drain Current
10 A
Continuous Source Current (Body Diode)
10 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
600 V
Drain-Source Voltage
600 V
ECCN Code
EAR99
Fall Time (tf)
25 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V
Gate-Drain Charge (Qgd)
12 nC
Gate-Source Charge (Qgs)
6 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
40 A
Maximum Pulsed Source Current
40 A
Rise Time (tr)
28 ns
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.4 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
28 nC
Turn-off Delay Time (tOFF)
40 ns
Turn-on Delay Time (tON)
13 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 10A,600V Surface mount MOSFET N-Channel Enhancement Mode High Current | Box | 200 | PBFREE | |
| Active | 10A,600V Surface mount MOSFET N-Channel Enhancement Mode High Current | Tape & Reel | 5,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| CDFM10-600N.PDF | Device Datasheet |
| Material Composition:DFN5X6 | Material Composition |
| Package Detail Document:DFN5X6 | Package Detail Document |