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AEM

CDM22010-650

10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current

Specifications

Body Diode Reverse Recovery (trr)
570 ns
Body Diode Stored Charge (Qrr)
4.7 µC
Case Type
TO-220
Common Source Input Capacitance (Ciss)
1168 pF
Common Source Output Capacitance (Coss)
129 pF
Common Source Reverse Transfer Capacitance (Crss)
1.2 pF
Continuous Drain Current
10 A
Continuous Source Current (Body Diode)
10 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
650 V
Drain-Source Voltage
650 V
ECCN Code
EAR99
Fall Time (tf)
36 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V(2.8 V Typical)
Gate-Drain Charge (Qgd)
7 nC
Gate-Source Charge (Qgs)
8 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
40 A
Maximum Pulsed Source Current
40 A
Power Dissipation
156 W
Power Dissipation
2 W
Rise Time (tr)
33 ns
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
608 mJ
Static Drain-Source On Resistance (rDS(ON))
1 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Storage Time (ts)
57 ns
Thermal Resistance Junction-Ambient
62.5 °C/W
Thermal Resistance Junction-Case
0.8 K/W
Total Gate Charge (Qg)
20 nC
Turn-off Delay Time (tOFF)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High CurrentSleeve50PBFREE

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