CDM22011-600LRFP
11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS
Specifications
Body Diode Reverse Recovery (trr)
315 ns
Body Diode Stored Charge (Qrr)
4 µC
Case Type
TO-220FP
Common Source Input Capacitance (Ciss)
763 pF
Common Source Output Capacitance (Coss)
52 pF
Common Source Reverse Transfer Capacitance (Crss)
2.76 pF
Continuous Drain Current
11 A
Continuous Source Current (Body Diode)
11 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
600 V
Drain-Source Voltage
600 V
ECCN Code
EAR99
Fall Time (tf)
23 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V(3 V Typical)
Gate-Drain Charge (Qgd)
11.31 nC
Gate-Source Charge (Qgs)
4.45 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
44 A
Maximum Pulsed Source Current
44 A
Power Dissipation
25 W
Rise Time (tr)
27 ns
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
280 mJ
Static Drain-Source On Resistance (rDS(ON))
0.36 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
120 °C/W
Thermal Resistance Junction-Case
5 °C/W
Total Gate Charge (Qg)
23.05 nC
Turn-off Delay Time (tOFF)
37 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS | Sleeve | 50 | PBFREE | |
| Active | 11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Lead frame | Analytical Test Report |
| Analytical Test Report:Leadframe and Jump Bar | Analytical Test Report |
| Analytical Test Report:Ni added Al Bond Wire | Analytical Test Report |
| Analytical Test Report:Plating | Analytical Test Report |
| Analytical Test Report:Pure Tin Plating | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CDM22011-600LRFP.PDF | Device Datasheet |
| Package Detail Document:TO-220FP | Package Detail Document |
| Process Change Notice:CP399 REPLACES CP391 | Process Change Notice |
| Product Brief:600V-700V UltraMOS MOSFETs | Product Brief |
| Product Brief:PB HV MOSFET | Product Brief |
| Spice Model:Spice Model CDM22011-600LRFP | Spice Model |