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AEM

CDM2205-800FP

5A,800V Through-Hole MOSFET N-Channel Enhancement Mode High Current

Specifications

Body Diode Reverse Recovery (trr)
549 ns
Body Diode Stored Charge (Qrr)
2.95 µC
Case Type
TO-220FP
Common Source Input Capacitance (Ciss)
705 pF
Common Source Output Capacitance (Coss)
72 pF
Common Source Reverse Transfer Capacitance (Crss)
2.8 pF
Continuous Drain Current
5 A
Continuous Source Current (Body Diode)
5 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
800 V
Drain-Source Voltage
800 V
ECCN Code
EAR99
Fall Time (tf)
30 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V(3 V Typical)
Gate-Drain Charge (Qgd)
7.88 nC
Gate-Source Charge (Qgs)
3.7 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
20 A
Maximum Pulsed Source Current
20 A
Power Dissipation
48 W
Rise Time (tr)
27 ns
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
323 mJ
Static Drain-Source On Resistance (rDS(ON))
2.7 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
120 °C/W
Thermal Resistance Junction-Case
2.6 °C/W
Total Gate Charge (Qg)
17.4 nC
Turn-off Delay Time (tOFF)
44 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued5A,800V Through-Hole MOSFET N-Channel Enhancement Mode High CurrentSleeve50PBFREE

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