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AEM

CDM3-800

3A,800V Surface mount MOSFET N-Channel Enhancement Mode High Current

Specifications

Body Diode Reverse Recovery (trr)
437 ns
Body Diode Stored Charge (Qrr)
1.68 µC
Case Type
DPAK
Common Source Input Capacitance (Ciss)
415 pF
Common Source Output Capacitance (Coss)
44 pF
Common Source Reverse Transfer Capacitance (Crss)
1.5 pF
Continuous Drain Current
3 A
Continuous Source Current (Body Diode)
3 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
800 V
Drain-Source Voltage
800 V
ECCN Code
EAR99
Fall Time (tf)
25 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V(3 V Typical)
Gate-Drain Charge (Qgd)
5.28 nC
Gate-Source Charge (Qgs)
2.55 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
12 A
Maximum Pulsed Source Current
12 A
Power Dissipation
80 W
Rise Time (tr)
23 ns
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
173 mJ
Static Drain-Source On Resistance (rDS(ON))
4.8 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
110 °C/W
Thermal Resistance Junction-Case
1.56 °C/W
Total Gate Charge (Qg)
11.3 nC
Turn-off Delay Time (tOFF)
25 ns
Turn-on Delay Time (tON)
10 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active3A,800V Surface mount MOSFET N-Channel Enhancement Mode High CurrentBox150PBFREE
Active3A,800V Surface mount MOSFET N-Channel Enhancement Mode High CurrentTape & Reel2,500PBFREE

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