CDM4-600LR
4A,600V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOS
Specifications
Body Diode Reverse Recovery (trr)
330 ns
Body Diode Stored Charge (Qrr)
2.14 µC
Case Type
DPAK
Common Source Input Capacitance (Ciss)
3.5 pF
Common Source Output Capacitance (Coss)
16.9 pF
Common Source Reverse Transfer Capacitance (Crss)
3 pF
Continuous Drain Current
4 A
Continuous Source Current (Body Diode)
4 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
600 V
Drain-Source Voltage
600 V
ECCN Code
EAR99
Fall Time (tf)
26.9 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V(3.25 V Typical)
Gate-Drain Charge (Qgd)
9.67 nC
Gate-Source Charge (Qgs)
2.78 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
20 A
Maximum Pulsed Source Current
20 A
Power Dissipation
38 W
Rise Time (tr)
30.5 ns
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
214 mJ
Static Drain-Source On Resistance (rDS(ON))
0.88 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
110 °C/W
Thermal Resistance Junction-Case
3.29 °C/W
Total Gate Charge (Qg)
16.63 nC
Turn-off Delay Time (tOFF)
51.5 ns
Turn-on Delay Time (tON)
8.8 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 4A,600V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOS | Box | 150 | PBFREE | |
| Discontinued | 4A,600V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOS | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Ni added Al Bond Wire | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CDM4-600LR.PDF | Device Datasheet |
| Material Composition:DPAK | Material Composition |
| Package Detail Document:DPAK | Package Detail Document |
| Process Change Notice:CP401 replaces CP390 | Process Change Notice |
| Product Brief:600V-700V UltraMOS MOSFETs | Product Brief |
| Product Brief:PB HV MOSFET | Product Brief |
| Product EOL Notice:CDM2205-800FP | Product EOL Notice |
| Product Reliability Data:DPAK Package Reliability | Product Reliability Data |
| Spice Model:Spice Model CDM4-600LR | Spice Model |