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AEM

CDM4-650

4A,650V Surface mount MOSFET N-Channel Enhancement Mode High Current

Specifications

Body Diode Reverse Recovery (trr)
266 ns
Body Diode Stored Charge (Qrr)
2.24 µC
Case Type
DPAK
Common Source Input Capacitance (Ciss)
463 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
1 pF
Continuous Drain Current
4 A
Continuous Source Current (Body Diode)
4 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
650 V
Drain-Source Voltage
650 V
ECCN Code
EAR99
Fall Time (tf)
21 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V(3.4 V Typical)
Gate-Drain Charge (Qgd)
4.7 nC
Gate-Source Charge (Qgs)
3 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
16 A
Maximum Pulsed Source Current
16 A
Power Dissipation
77 W
Power Dissipation
620 mW
Rise Time (tr)
23 ns
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
202 mJ
Static Drain-Source On Resistance (rDS(ON))
2.7 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Storage Time (ts)
23 ns
Thermal Resistance Junction-Ambient
110 °C/W
Thermal Resistance Junction-Case
1.62 °C/W
Total Gate Charge (Qg)
11.4 nC
Turn-off Delay Time (tOFF)
9 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued4A,650V Surface mount MOSFET N-Channel Enhancement Mode High CurrentTape & Reel2,500TINNo

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