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AEM

CDM7-700LR

7A,700V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOS

Specifications

Body Diode Reverse Recovery (trr)
395 ns
Body Diode Stored Charge (Qrr)
2.9 µC
Case Type
DPAK
Common Source Input Capacitance (Ciss)
561 pF
Common Source Output Capacitance (Coss)
26.9 pF
Common Source Reverse Transfer Capacitance (Crss)
2.45 pF
Continuous Drain Current
7 A
Continuous Source Current (Body Diode)
7 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
700 V
Drain-Source Voltage
700 V
ECCN Code
EAR99
Fall Time (tf)
27.7 ns
Fall Time (tf)
33.4 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V(3.3 V Typical)
Gate-Drain Charge (Qgd)
12.3 nC
Gate-Source Charge (Qgs)
2.5 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
25 A
Maximum Pulsed Source Current
25 A
Power Dissipation
36 W
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
260 mJ
Static Drain-Source On Resistance (rDS(ON))
0.6 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
62 °C/W
Thermal Resistance Junction-Case
3.47 °C/W
Total Gate Charge (Qg)
18.8 nC
Turn-off Delay Time (tOFF)
54 ns
Turn-on Delay Time (tON)
10.7 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only7A,700V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOSBox150PBFREE
Discontinued, Stock Only7A,700V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOSTape & Reel2,500PBFREE

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