CDMS24740-120
26A,1200V Through-Hole MOSFET N-Channel SiC
Specifications
Case Type
TO-247
Common Source Input Capacitance (Ciss)
1700 pF
Common Source Output Capacitance (Coss)
160 pF
Common Source Reverse Transfer Capacitance (Crss)
30 pF
Continuous Drain Current
26 A
Drain-Source Voltage
1.2 kV
ECCN Code
EAR99
Fall Time (tf)
20 ns
Forward Voltage (VF)
5 V
Gate Leakage Current (IGSS)
0.1 nA
Gate Threshold Voltage (VGS(th))
2.5 V
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0055
Internal Gate Resistance (RG)
3 Ω
Junction Temperature (Tj)
-55 — 175 °C
Maximum Pulsed Drain Current
40 A
Power Dissipation
28 W
Rise Time (tr)
30 ns
Saturation Drain Current (IDSS)
0.1 µA
Static Drain-Source On Resistance (rDS(ON))
0.06 Ω
Storage Temperature (Tstg)
-55 — 175 °C
Stored Energy at Output (Eoss)
14 µJ
Transconductance (GM)
10 S
Turn off Switching Energy (Eoff)
32 µJ
Turn On Switching Energy (Eon)
150 µJ
Turn-off Delay Time (tOFF)
50 ns
Turn-on Delay Time (tON)
30 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 26A,1200V Through-Hole MOSFET N-Channel SiC | Sleeve | 30 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Molding Compound | Analytical Test Report |
| Analytical Test Report:Plating | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Wire | Analytical Test Report |
| CDMS24740-120.PDF | Device Datasheet |
| Material Composition:TO-247 | Material Composition |
| Package Detail Document:TO-247 | Package Detail Document |
| Product Brief:SiC MOSFETs | Product Brief |
| Product Reliability Data:TO-247 Package Reliability | Product Reliability Data |