CDMS24780-170
1700V Through-Hole MOSFET N-Channel SiC
Specifications
Body Diode Stored Charge (Qrr)
0.1 µC
Case Type
TO-247
Common Source Input Capacitance (Ciss)
850 pF
Common Source Output Capacitance (Coss)
40 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Diode Forward On Voltage (VSD)
5 V
Drain-Source Voltage
1.7 kV
ECCN Code
EAR99
Fall Time (tf)
22 ns
Gate Leakage Current (IGSS)
0.5 nA
Gate Resistance (RG)
14 Ω
Gate Threshold Voltage (VGS(th))
5 V
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 175 °C
Maximum Pulsed Drain Current
20 A
Power Dissipation
28 W
Rise Time (tr)
17 ns
Saturation Drain Current (IDSS)
0.5 µA
Static Drain-Source On Resistance (rDS(ON))
0.15 Ω
Storage Temperature (Tstg)
-55 — 175 °C
Stored Energy at Output (Eoss)
35 µJ
Transconductance (GM)
4.5 S
Turn off Switching Energy (Eoff)
150 µJ
Turn On Switching Energy (Eon)
650 µJ
Turn-off Delay Time (tOFF)
36 ns
Turn-on Delay Time (tON)
80 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 1700V Through-Hole MOSFET N-Channel SiC | Sleeve | 30 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Molding Compound | Analytical Test Report |
| Analytical Test Report:Plating | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Wire | Analytical Test Report |
| CDMS24780_170.PDF | Device Datasheet |
| Material Composition:TO-247 | Material Composition |
| Package Detail Document:TO-247 | Package Detail Document |
| Product Reliability Data:TO-247 Package Reliability | Product Reliability Data |