Skip to main content
AEM

CDMSJ22013.8-650

13.8A,650V Through-Hole MOSFET N-Channel Super Junction

Specifications

Body Diode Reverse Recovery (trr)
344 ns
Body Diode Stored Charge (Qrr)
5.4 µC
Case Type
TO-220FP
Common Source Input Capacitance (Ciss)
1040 pF
Common Source Output Capacitance (Coss)
38 pF
Common Source Reverse Transfer Capacitance (Crss)
11 pF
Continuous Drain Current
8.7 A
Continuous Drain Current
13.8 A
Continuous Source Current (Body Diode)
13.8 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
650 V
Drain-Source Voltage
650 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Co(er))
48 pF
Fall Time (tf)
66 ns
Forward Transadmittance (gfs)
13000 mS
Gate Leakage Current (IGSS)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Resistance (RG)
21 Ω
Gate Threshold Voltage (VGS(th))
2 — 4 V(3.2 V Typical)
Gate-Drain Charge (Qgd)
13 nC
Gate-Source Charge (Qgs)
6 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
41.4 A
Power Dissipation
14.3 W
Power Dissipation
35.7 W
Rise Time (tr)
69 ns
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.28 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
30 nC
Turn-off Delay Time (tOFF)
171 ns
Turn-on Delay Time (tON)
43 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Special Order Item13.8A,650V Through-Hole MOSFET N-Channel Super JunctionSleeve50PBFREE

Resources

Recently Viewed