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AEM

CDMSJ22029-650

29A,650V Through-Hole MOSFET N-Channel Super Junction

Specifications

Body Diode Reverse Recovery (trr)
413 ns
Body Diode Stored Charge (Qrr)
6.6 µC
Case Type
TO-220FP
Common Source Input Capacitance (Ciss)
1920 pF
Common Source Output Capacitance (Coss)
61 pF
Common Source Reverse Transfer Capacitance (Crss)
8 pF
Continuous Drain Current
17.7 A
Continuous Drain Current
29 A
Continuous Source Current (Body Diode)
29 A
Diode Forward On Voltage (VSD)
1.5 V
Drain-Source Breakdown Voltage (BVDSS)
650 V
Drain-Source Voltage
650 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Co(er))
84 pF
Fall Time (tf)
77 ns
Forward Transadmittance (gfs)
23000 mS
Gate Leakage Current (IGSS)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Resistance (RG)
2.2 Ω
Gate Threshold Voltage (VGS(th))
2 — 4 V(3 V Typical)
Gate-Drain Charge (Qgd)
20 nC
Gate-Source Charge (Qgs)
11 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
63 A
Power Dissipation
14 W
Power Dissipation
33 W
Rise Time (tr)
79 ns
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.13 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
51 nC
Turn-off Delay Time (tOFF)
201 ns
Turn-on Delay Time (tON)
62 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Special Order Item29A,650V Through-Hole MOSFET N-Channel Super JunctionSleeve50PBFREE

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