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AEM

CEDM7002AE

300mA,60V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
SOT-883L
Common Source Input Capacitance (Ciss)
50 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
300 mA
Diode Forward On Voltage (VSD)
0.5 — 1.1 V
Drain-Gate Voltage
60 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source Voltage
60 V
ECCN Code
EAR99
Forward Transconductance (gFS)
220 mS
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
1.2 — 2 V(1.5 V Typical)
Gate-Drain Charge (Qgd)
0.14 nC
Gate-Source Charge (Qgs)
0.2 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
800 mA
Power Dissipation
100 mW
Saturation Drain Current (IDSS)
500 µA
Saturation Drain Current (IDSS)
0.1 µA
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
1.6 Ω
Static Drain-Source On Resistance (rDS(ON))
6 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
1250 °C/W
Total Gate Charge (Qg)
0.5 nC
Turn Off Time (toff)
45 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active300mA,60V Surface mount MOSFET N-Channel Enhancement ModeBox5,000TINNo
Active300mA,60V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel8,000TINNo

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