CEDM8001VL
100mA,20V Surface mount MOSFET P-Channel Enhancement Mode
Specifications
Case Type
SOT-883VL
Common Source Input Capacitance (Ciss)
45 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
15 pF
Continuous Drain Current
100 mA
Device Family
MOSFETs/JFETs
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
100 mS
Gate Leakage Current, Forward (IGSSF)
1000 nA
Gate Leakage Current, Reverse (IGSSR)
1000 nA
Gate Threshold Voltage (VGS(th))
0.6 — 1.1 V
Gate-Drain Charge (Qgd)
0.181 nC
Gate-Source Charge (Qgs)
0.158 nC
Gate-Source Voltage (VGS)
10 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
200 mA
Power Dissipation
100 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
8 Ω
Static Drain-Source On Resistance (rDS(ON))
12 Ω
Static Drain-Source On Resistance (rDS(ON))
45 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.658 nC
Turn Off Time (toff)
80 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 100mA,20V Surface mount MOSFET P-Channel Enhancement Mode | Box | 5,000 | PBFREE | ||
| Discontinued | 100mA,20V Surface mount MOSFET P-Channel Enhancement Mode | Tape & Reel | 8,000 | TIN | No |
Resources
| Item | Type |
|---|---|
| CEDM8001VL.PDF | Device Datasheet |
| Material Composition:SOT-883VL | Material Composition |
| Package Detail Document:SOT-883VL | Package Detail Document |
| Product EOL Notice:SOT-883VL CASE | Product EOL Notice |
| Spice Model:Spice Model CEDM8001VL | Spice Model |