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AEM

CEDM8004VL

450mA,30V Surface mount MOSFET P-Channel Enhancement Mode

Specifications

Case Type
SOT-883VL
Common Source Input Capacitance (Ciss)
55 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
10 pF
Continuous Drain Current
450 mA
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
3000 nA
Gate Leakage Current, Reverse (IGSSR)
3000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.128 nC
Gate-Source Charge (Qgs)
0.35 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
100 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
1.1 Ω
Static Drain-Source On Resistance (rDS(ON))
3.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.88 nC

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued450mA,30V Surface mount MOSFET P-Channel Enhancement ModeTape & Reel8,000TINNo

Resources

ItemType
CEDM8004VL.PDFDevice Datasheet
Material Composition:SOT-883VLMaterial Composition
Package Detail Document:SOT-883VLPackage Detail Document
Product EOL Notice:SOT-883VL CASEProduct EOL Notice
Spice Model:Spice Model CEDM8004VLSpice Model

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