CEN-U06N
100V,2A,8.33W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.2 V
Case Type
TO-202-2
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Collector Current
2 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
80 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
4 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
30 pF
Power Dissipation
1.25 W
Power Dissipation
8.33 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
100 °C/W
Thermal Resistance Junction-Case
15 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 100V,2A,8.33W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Box | 750 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| CEN-U05N_SERIES.PDF | Device Datasheet |
| Material Composition:TO-202-2 | Material Composition |
| Package Detail Document:TO-202-2 | Package Detail Document |
| Product EOL Notice:All Product in the TO-202 and | Product EOL Notice |