CEN-U10
300V,500mA,1.75W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
TO-202
Collector-Base Breakdown Voltage (BVCBO)
300 V
Collector-Base Cutoff Current (ICBO)
200 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
300 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
45 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
3 pF
Power Dissipation
10 W
Power Dissipation
1.75 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
70 °C/W
Thermal Resistance Junction-Case
12.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 300V,500mA,1.75W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| CEN-U10.PDF | Device Datasheet |
| Package Detail Document:TO-237 | Package Detail Document |
| Product EOL Notice:TO-237 Transisitors | Product EOL Notice |