CEN-U60
300V,500mA,1.75W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-202
Collector-Base Breakdown Voltage (BVCBO)
300 V
Collector-Base Cutoff Current (ICBO)
200 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
300 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
30 x10³
Device Family
Transistors
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
1.75 W
Power Dissipation
10 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
70 °C/W
Thermal Resistance Junction-Case
12.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 300V,500mA,1.75W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| CEN-U60.PDF | Device Datasheet |
| Material Composition:TO-202 | Material Composition |
| Package Detail Document:TO-202 | Package Detail Document |
| Product EOL Notice:All Product in the TO-202 and | Product EOL Notice |
| Product Reliability Data:TO-202 Package Reliability | Product Reliability Data |