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AEM

CJD117

2A,100V Surface mount Transistor-Bipolar Power (>1A) PNP Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
2.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
4 V
Case Type
DPAK
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
50 mA
Continuous Collector Current
2 A
Current Gain-Bandwidth Product (fT)
25 MHz
DC Current Gain (hFE)
1 — 12 x10³
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
500 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
200 pF
Peak Collector Current
4 A
Power Dissipation
1.75 W
Power Dissipation
20 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
71.4 °C/W
Thermal Resistance Junction-Case
6.25 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only2A,100V Surface mount Transistor-Bipolar Power (>1A) PNP DarlingtonBox150PBFREE

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