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AEM

CJD2955

60V,10A,20W Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.8 V
Case Type
DPAK
Collector-Base Cutoff Current (ICBO)
2000000 nA
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Voltage
70 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Cutoff Current (ICEV)
20 µA
Collector-Emitter Cutoff Current (ICEV)
2000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
8000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1100 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
6 A
Continuous Collector Current
10 A
Current Gain-Bandwidth Product (fT)
2 MHz
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
20 — 100 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
500000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
1.75 W
Power Dissipation
20 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
71.4 °C/W
Thermal Resistance Junction-Case
6.25 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only60V,10A,20W Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchBox150PBFREE
Discontinued60V,10A,20W Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchTape & Reel2,500PBFREE

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