CJD31C
100V,3A,15W Surface mount Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.8 V
Case Type
DPAK
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Cutoff Current (ICES)
20 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
1 A
Continuous Collector Current
3 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
10 — 50 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
5 A
Power Dissipation
1.56 W
Power Dissipation
15 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
80.1 °C/W
Thermal Resistance Junction-Case
8.33 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued, Stock Only | 100V,3A,15W Surface mount Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Box | 150 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Ni added Al Bond Wire | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CJD31C-32C.PDF | Device Datasheet |
| Material Composition:DPAK | Material Composition |
| Package Detail Document:DPAK | Package Detail Document |
| Product EOL Notice:DPAK TRANSISTORS | Product EOL Notice |
| Product Reliability Data:DPAK Package Reliability | Product Reliability Data |
| Spice Model:Spice Model CJD31C | Spice Model |