CJD42C
100V,6A,20W Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
DPAK
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
2 A
Continuous Collector Current
6 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
15 — 75 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
500000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
10 A
Power Dissipation
1.75 W
Power Dissipation
20 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
71.4 °C/W
Thermal Resistance Junction-Case
6.25 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued, Stock Only | 100V,6A,20W Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Box | 150 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Ni added Al Bond Wire | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CJD41C-42C.PDF | Device Datasheet |
| Material Composition:DPAK | Material Composition |
| Package Detail Document:DPAK | Package Detail Document |
| Product EOL Notice:DPAK TRANSISTORS | Product EOL Notice |
| Product Reliability Data:DPAK Package Reliability | Product Reliability Data |
| Spice Model:Spice Model CJD42C | Spice Model |