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AEM

CJD45H11

80V,8A,20W Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
DPAK
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
8 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
60 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
50000 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
100 ns
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
220 pF
Peak Collector Current
16 A
Power Dissipation
1.75 W
Power Dissipation
20 W
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
450 ns
Thermal Resistance Junction-Ambient
71.4 °C/W
Thermal Resistance Junction-Case
6.25 °C/W
Turn On Time (ton)
150 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only80V,8A,20W Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchBox150PBFREE
Discontinued80V,8A,20W Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchTape & Reel2,500PBFREE

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