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AEM

CJD47

250V,1A,15W Surface mount Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Base-Emitter On Voltage (VBE(ON))
1.5 V
Case Type
DPAK
Collector-Base Voltage
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Cutoff Current (ICEO)
200 µA
Collector-Emitter Cutoff Current (ICES)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Base Current
600 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
30 — 150 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
2 A
Power Dissipation
1.56 W
Power Dissipation
15 W
Small Signal Current Gain (hfe)
25 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
80.1 °C/W
Thermal Resistance Junction-Case
8.33 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only250V,1A,15W Surface mount Transistor-Small Signal (<=1A) NPN High VoltageBox150PBFREE

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