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AEM

CM4957

25V,30mA,200mW Through-Hole Transistor-Small Signal (<=1A) PNP RF Oscillator

Specifications

Amplifier Power Gain (Gpe)
17 — 25 dB
Case Type
TO-72
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
30 mA
Current Gain-Bandwidth Product (fT)
1200 — 2500 MHz
DC Current Gain (hFE)
20 — 150 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage
3 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
2 pF
Power Dissipation
300 mW
Power Dissipation
200 mW
Small Signal Current Gain (hfe)
20 — 200 x10³
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued25V,30mA,200mW Through-Hole Transistor-Small Signal (<=1A) PNP RF OscillatorBox2,000PBFREE

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