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AEM

CMKDM8005

650mA,20V Surface mount MOSFET Dual P-Channel Enhancement Mode

Specifications

Case Type
SOT-363
Common Source Input Capacitance (Ciss)
100 pF
Common Source Output Capacitance (Coss)
21 pF
Common Source Reverse Transfer Capacitance (Crss)
25 pF
Continuous Drain Current
650 mA
Continuous Source Current (Body Diode)
250 mA
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.36 nC
Gate-Source Charge (Qgs)
0.24 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
1 A
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
0.1 µA
Static Drain-Source On Resistance (rDS(ON))
0.5 Ω
Static Drain-Source On Resistance (rDS(ON))
0.36 Ω
Static Drain-Source On Resistance (rDS(ON))
0.8 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
1.2 nC
Turn Off Time (toff)
48 ns
Turn On Time (ton)
38 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active650mA,20V Surface mount MOSFET Dual P-Channel Enhancement ModeBox5,000PBFREE
Active650mA,20V Surface mount MOSFET Dual P-Channel Enhancement ModeTape & Reel3,000TINNo

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