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AEM

CMKT5089M10

25V,50mA,350mW Surface mount Transistor-Small Signal (<=1A) Dual NPN Low Noise Amplifier

Specifications

Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
SOT-363
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
450 x10³
DC Current Gain (hFE)
400 x10³
DC Current Gain (hFE)
400 — 1200 x10³
DC Current Gain Matching (hFE1/hFE2)
0.9 — 1
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
4.5 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
10 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
350 mW
Small Signal Current Gain (hfe)
450 — 1800 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active25V,50mA,350mW Surface mount Transistor-Small Signal (<=1A) Dual NPN Low Noise AmplifierBox5,000PBFREE

Resources

ItemType
Analytical Test Report:Green Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Henkel 84-1LMISR4Analytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
CMKT5089M10.PDFDevice Datasheet
Material Composition:SOT-363Material Composition
Package Detail Document:SOT-363Package Detail Document
Product Reliability Data:SOT-363 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model CMKT5089M10Spice Model
Step File 3D Object:SOT-363 (SC-88)Step File 3D Object

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