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CMLDM3757
Surface mount MOSFET 540mA,20V Dual: N-Channel/P-Channel MOSFET&430mA,20V
Specifications
Case Type
SOT-563
Common Source Input Capacitance (Ciss)
175 pF
Common Source Input Capacitance (Ciss)
150 pF
Common Source Output Capacitance (Coss)
30 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
20 pF
Common Source Reverse Transfer Capacitance (Crss)
20 pF
Continuous Drain Current
430 mA
Continuous Drain Current
540 mA
Diode Forward On Voltage (VSD)
1.2 V
Diode Forward On Voltage (VSD)
1.2 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
2000 nA
Gate Leakage Current, Forward (IGSSF)
5000 nA
Gate Leakage Current, Reverse (IGSSR)
2000 nA
Gate Leakage Current, Reverse (IGSSR)
5000 nA
Gate Threshold Voltage (VGS(th))
0.45 — 1 V
Gate Threshold Voltage (VGS(th))
0.45 — 1 V
Gate-Drain Charge (Qgd)
0.36 nC
Gate-Drain Charge (Qgd)
0.24 nC
Gate-Source Charge (Qgs)
0.24 nC
Gate-Source Charge (Qgs)
0.17 nC
Gate-Source Voltage (VGS)
8 V
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
750 mA
Maximum Pulsed Drain Current
1.5 A
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
1 µA
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
0.7 Ω
Static Drain-Source On Resistance (rDS(ON))
1.2 Ω
Static Drain-Source On Resistance (rDS(ON))
0.55 Ω
Static Drain-Source On Resistance (rDS(ON))
0.9 Ω
Static Drain-Source On Resistance (rDS(ON))
0.9 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
1.2 nC
Total Gate Charge (Qg)
1.58 nC
Turn Off Time (toff)
48 ns
Turn Off Time (toff)
25 ns
Turn On Time (ton)
38 ns
Turn On Time (ton)
10 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | Surface mount MOSFET 540mA,20V Dual: N-Channel/P-Channel MOSFET&430mA,20V | Box | 5,000 | PBFREE | ||
| Active | Surface mount MOSFET 540mA,20V Dual: N-Channel/P-Channel MOSFET&430mA,20V | Tape & Reel | 3,000 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CMLDM3757.PDF | Device Datasheet |
| Material Composition:SOT-563 | Material Composition |
| Package Detail Document:SOT-563 | Package Detail Document |
| Process Change Notice:Copper Wire Bonding - SOT-563 | Process Change Notice |
| Process Change Notice:SOT-563 Alternate Lead Frame | Process Change Notice |
| Product Reliability Data:SOT-563 Package Reliability | Product Reliability Data |
| Spice Model:Spice Model CMLDM3757_NCHAN | Spice Model |
| Spice Model:Spice Model CMLDM3757_PCHAN | Spice Model |