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CMLDM7003T

280mA,50V Surface mount MOSFET Dual N-Channel Enhancement Mode

Specifications

Case Type
SOT-563
Common Source Input Capacitance (Ciss)
60 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
280 mA
Diode Forward On Voltage (VSD)
1.4 V
Drain-Gate Voltage
50 V
Drain-Source Breakdown Voltage (BVDSS)
50 V
Drain-Source Voltage
50 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
500 nA
Gate Leakage Current, Forward (IGSSF)
1000 nA
Gate Leakage Current, Forward (IGSSF)
50 nA
Gate Leakage Current, Reverse (IGSSR)
500 nA
Gate Leakage Current, Reverse (IGSSR)
1000 nA
Gate Leakage Current, Reverse (IGSSR)
50 nA
Gate Threshold Voltage (VGS(th))
0.7 — 1.2 V
Gate-Drain Charge (Qgd)
0.156 nC
Gate-Source Charge (Qgs)
0.148 nC
Gate-Source Voltage (VGS)
12 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
1.5 A
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
0.05 µA
Static Drain-Source On Resistance (rDS(ON))
1.9 Ω
Static Drain-Source On Resistance (rDS(ON))
1.5 Ω
Static Drain-Source On Resistance (rDS(ON))
2.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
0.764 nC

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active280mA,50V Surface mount MOSFET Dual N-Channel Enhancement ModeBox5,000PBFREE
Active280mA,50V Surface mount MOSFET Dual N-Channel Enhancement ModeBox5,000PBFREE
Active280mA,50V Surface mount MOSFET Dual N-Channel Enhancement ModeTape & Reel3,000TINNo
Active280mA,50V Surface mount MOSFET Dual N-Channel Enhancement ModeTape & Reel3,000PBFREE

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