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CMLDM7120

1A,20V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
SOT-563
Common Source Input Capacitance (Ciss)
220 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Continuous Drain Current
1 A
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
2500 mS
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate-Drain Charge (Qgd)
0.65 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
10 µA
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Static Drain-Source On Resistance (rDS(ON))
0.1 Ω
Static Drain-Source On Resistance (rDS(ON))
0.25 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
2.4 nC
Turn Off Time (toff)
140 ns
Turn On Time (ton)
25 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active1A,20V Surface mount MOSFET N-Channel Enhancement ModeBox5,000PBFREE
Active1A,20V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel3,000TINNo

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