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CMLDM8002A

280mA,50V Surface mount MOSFET Dual P-Channel Enhancement Mode

Specifications

Case Type
SOT-563
Common Source Input Capacitance (Ciss)
70 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Drain Current
280 mA
Continuous Source Current (Body Diode)
280 mA
Diode Forward On Voltage (VSD)
1.3 V
Drain-Gate Voltage
50 V
Drain-Source Breakdown Voltage (BVDSS)
50 V
Drain-Source On Voltage (VDS(ON))
1500 mV
Drain-Source On Voltage (VDS(ON))
150 mV
Drain-Source Voltage
50 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 2.5 V
Gate-Drain Charge (Qgd)
0.16 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
1.5 A
Maximum Pulsed Source Current
1.5 A
On State Drain Current (ID(ON))
500 mA
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
500 µA
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Static Drain-Source On Resistance (rDS(ON))
2.5 Ω
Static Drain-Source On Resistance (rDS(ON))
4 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
0.72 nC
Turn Off Time (toff)
20 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active280mA,50V Surface mount MOSFET Dual P-Channel Enhancement ModeBox5,000PBFREE
Active280mA,50V Surface mount MOSFET Dual P-Channel Enhancement ModeBox5,000PBFREE
Special Order Item280mA,50V Surface mount MOSFET Dual P-Channel Enhancement ModeTape & Reel3,000TINNo
Active280mA,50V Surface mount MOSFET Dual P-Channel Enhancement ModeTape & Reel3,000PBFREE

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