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CMLM0305T

Surface mount Module 280mA,50V N-Channel MOSFET&500mA,40V Low VF Schottky Diode

Specifications

Case Type
SOT-563
Common Source Input Capacitance (Ciss)
50 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
280 mA
Continuous Forward Current
500 mA
Diode Forward On Voltage (VSD)
1.4 V
Drain-Gate Voltage
50 V
Drain-Source Breakdown Voltage (BVDSS)
50 V
Drain-Source Voltage
50 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Forward Voltage (VF)
0.27 V
Forward Voltage (VF)
0.13 V
Forward Voltage (VF)
0.35 V
Forward Voltage (VF)
0.47 V
Forward Voltage (VF)
0.21 V
Gate Leakage Current, Forward (IGSSF)
500 nA
Gate Leakage Current, Forward (IGSSF)
1000 nA
Gate Leakage Current, Forward (IGSSF)
50 nA
Gate Leakage Current, Reverse (IGSSR)
500 nA
Gate Leakage Current, Reverse (IGSSR)
1000 nA
Gate Leakage Current, Reverse (IGSSR)
50 nA
Gate Threshold Voltage (VGS(th))
0.75 — 1.2 V
Gate-Source Voltage (VGS)
12 V
HTS Code
8541.50.0080
Junction Capacitance (CJ)
50 pF
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
1.5 A
Peak Forward Surge Current
10 A
Peak Repetitive Forward Current
3.5 A
Peak Repetitive Reverse Voltage
40 V
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Reverse Breakdown Voltage (BVR)
40 V
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
30 µA
Saturation Drain Current (IDSS)
0.05 µA
Static Drain-Source On Resistance (rDS(ON))
1.9 Ω
Static Drain-Source On Resistance (rDS(ON))
1.5 Ω
Static Drain-Source On Resistance (rDS(ON))
2.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock OnlySurface mount Module 280mA,50V N-Channel MOSFET&500mA,40V Low VF Schottky DiodeBox5,000PBFREE
Discontinued, Stock OnlySurface mount Module 280mA,50V N-Channel MOSFET&500mA,40V Low VF Schottky DiodeTape & Reel3,000PBFREE

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