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CMLM0574

Surface mount Module 450mA,30V N-Channel MOSFET&500mA,40V Low VF Schottky Diode

Specifications

Case Type
SOT-563
Common Source Input Capacitance (Ciss)
43 pF
Common Source Output Capacitance (Coss)
8 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
450 mA
Continuous Forward Current
500 mA
Diode Forward On Voltage (VSD)
0.5 — 1.1 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Forward Voltage (VF)
0.27 V
Forward Voltage (VF)
0.13 V
Forward Voltage (VF)
0.35 V
Forward Voltage (VF)
0.47 V
Forward Voltage (VF)
0.21 V
Gate Leakage Current, Forward (IGSSF)
3000 nA
Gate Leakage Current, Reverse (IGSSR)
3000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.23 nC
Gate-Source Charge (Qgs)
0.15 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.50.0080
Junction Capacitance (CJ)
50 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
10 A
Peak Repetitive Forward Current
3.5 A
Peak Repetitive Reverse Voltage
40 V
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Reverse Breakdown Voltage (BVR)
40 V
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
20 µA
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.56 Ω
Static Drain-Source On Resistance (rDS(ON))
0.46 Ω
Static Drain-Source On Resistance (rDS(ON))
0.73 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
0.792 nC

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued, Stock OnlySurface mount Module 450mA,30V N-Channel MOSFET&500mA,40V Low VF Schottky DiodeBox5,000PBFREE
Discontinued, Stock OnlySurface mount Module 450mA,30V N-Channel MOSFET&500mA,40V Low VF Schottky DiodeTape & Reel3,000TINNo

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