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CMLM0584

Surface mount Module 450mA,30V P-Channel MOSFET&500mA,40V Low VF Schottky Diode

Specifications

Case Type
SOT-563
Common Source Input Capacitance (Ciss)
55 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
10 pF
Continuous Drain Current
450 mA
Continuous Forward Current
500 mA
Diode Forward On Voltage (VSD)
0.5 — 1.1 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Forward Voltage (VF)
0.27 V
Forward Voltage (VF)
0.13 V
Forward Voltage (VF)
0.35 V
Forward Voltage (VF)
0.47 V
Forward Voltage (VF)
0.21 V
Gate Leakage Current, Forward (IGSSF)
3000 nA
Gate Leakage Current, Reverse (IGSSR)
3000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.128 nC
Gate-Source Charge (Qgs)
0.35 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.50.0080
Junction Capacitance (CJ)
50 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
10 A
Peak Repetitive Forward Current
3.5 A
Peak Repetitive Reverse Voltage
40 V
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Reverse Breakdown Voltage (BVR)
40 V
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
20 µA
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
1.1 Ω
Static Drain-Source On Resistance (rDS(ON))
3.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
0.88 nC

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued, Stock OnlySurface mount Module 450mA,30V P-Channel MOSFET&500mA,40V Low VF Schottky DiodeTape & Reel3,000TINNo

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