No image available
CMLM0708A
Surface mount MOSFET 280mA,60V Dual: N-Channel/P-Channel MOSFET&280mA,50V
Specifications
Case Type
SOT-563
Common Source Input Capacitance (Ciss)
70 pF
Common Source Input Capacitance (Ciss)
50 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
280 mA
Continuous Drain Current
280 mA
Continuous Source Current (Body Diode)
280 mA
Continuous Source Current (Body Diode)
280 mA
Diode Forward On Voltage (VSD)
1.2 V
Diode Forward On Voltage (VSD)
1.3 V
Drain-Gate Voltage
50 V
Drain-Gate Voltage
60 V
Drain-Source Breakdown Voltage (BVDSS)
50 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source On Voltage (VDS(ON))
150 mV
Drain-Source On Voltage (VDS(ON))
1000 mV
Drain-Source On Voltage (VDS(ON))
1500 mV
Drain-Source On Voltage (VDS(ON))
150 mV
Drain-Source Voltage
50 V
Drain-Source Voltage
60 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Forward Transconductance (gFS)
80 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 2.5 V
Gate Threshold Voltage (VGS(th))
1 — 2.5 V
Gate-Drain Charge (Qgd)
0.148 nC
Gate-Drain Charge (Qgd)
0.16 nC
Gate-Source Charge (Qgs)
0.196 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
20 V
Gate-Source Voltage (VGS)
40 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
1.5 A
Maximum Pulsed Drain Current
1.5 A
Maximum Pulsed Source Current
1.5 A
Maximum Pulsed Source Current
1.5 A
On State Drain Current (ID(ON))
500 mA
On State Drain Current (ID(ON))
500 mA
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
500 µA
Saturation Drain Current (IDSS)
1 µA
Saturation Drain Current (IDSS)
500 µA
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
3.5 Ω
Static Drain-Source On Resistance (rDS(ON))
2.5 Ω
Static Drain-Source On Resistance (rDS(ON))
4 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
0.592 nC
Total Gate Charge (Qg)
0.72 nC
Turn Off Time (toff)
20 ns
Turn Off Time (toff)
20 ns
Turn On Time (ton)
20 ns
Turn On Time (ton)
20 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Surface mount MOSFET 280mA,60V Dual: N-Channel/P-Channel MOSFET&280mA,50V | Box | 5,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CMLM0708A.PDF | Device Datasheet |
| Material Composition:SOT-563 | Material Composition |
| Package Detail Document:SOT-563 | Package Detail Document |
| Process Change Notice:Copper Wire Bonding - SOT-563 | Process Change Notice |
| Process Change Notice:SOT-563 Alternate Lead Frame | Process Change Notice |
| Product Reliability Data:SOT-563 Package Reliability | Product Reliability Data |
| Spice Model:Spice Model CMLM0708A_NCHAN | Spice Model |
| Spice Model:Spice Model CMLM0708A_PCHAN | Spice Model |