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CMLT3820

60V,1A,250mW Surface mount Transistor-Small Signal (<=1A) NPN Low VCE(SAT)

Specifications

Base-Emitter On Voltage (VBE(ON))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
SOT-563
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
115 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
280 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
300 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
2 A
Power Dissipation
250 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
500 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active60V,1A,250mW Surface mount Transistor-Small Signal (<=1A) NPN Low VCE(SAT)Box5,000PBFREE
Special Order Item60V,1A,250mW Surface mount Transistor-Small Signal (<=1A) NPN Low VCE(SAT)Tape & Reel3,000TINNo

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