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CMLT4413
Surface mount Transistor-Small Signal (<=1A) 40V,600mA Dual NPN&40V,600mA PNP General Purpose Amplifier
Specifications
Base Cutoff Current (IBL)
100 nA
Base Cutoff Current (IBL)
100 nA
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 0.95 V
Case Type
SOT-563
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage
40 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.1 µA
Collector-Emitter Cutoff Current (ICEV)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
40 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
600 mA
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
200 MHz
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
20 x10³
Delay Time (td)
15 ns
Delay Time (td)
15 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
5 V
Emitter-Base Voltage
6 V
Fall Time (tf)
30 ns
Fall Time (tf)
30 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
30 pF
Input Capacitance (Cib)
30 pF
Input Impedance Common Emitter (hie)
1.5 — 15 kΩ
Input Impedance Common Emitter (hie)
1 — 15 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Output Admittance Common Emitter (hoe)
1 — 100 µS
Output Admittance Common Emitter (hoe)
1 — 30 µS
Output Capacitance (Cob)
8.5 pF
Output Capacitance (Cob)
6.5 pF
Power Dissipation
300 mW
Power Dissipation
150 mW
Power Dissipation
350 mW
Rise Time (tr)
20 ns
Rise Time (tr)
20 ns
Small Signal Current Gain (hfe)
60 — 500 x10³
Small Signal Current Gain (hfe)
40 — 500 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
225 ns
Storage Time (ts)
225 ns
Thermal Resistance Junction-Ambient
357 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.01 — 0.8 x10⁻³
Voltage Feedback Ratio Common Emitter (hre)
0.01 — 0.8 x10⁻³
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Special Order Item | Surface mount Transistor-Small Signal (<=1A) 40V,600mA Dual NPN&40V,600mA PNP General Purpose Amplifier | Tape & Reel | 3,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CMLT4413.PDF | Device Datasheet |
| Material Composition:SOT-563 | Material Composition |
| Package Detail Document:SOT-563 | Package Detail Document |
| Process Change Notice:Copper Wire Bonding - SOT-563 | Process Change Notice |
| Process Change Notice:SOT-563 Alternate Lead Frame | Process Change Notice |
| Product Reliability Data:SOT-563 Package Reliability | Product Reliability Data |