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CMLT5551HC

160V,1A,350mW Surface mount Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
SOT-563
Collector-Base Breakdown Voltage (BVCBO)
180 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
180 V
Collector-Emitter Breakdown Voltage (BVCEO)
160 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
160 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
80 — 250 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
80 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
15 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active160V,1A,350mW Surface mount Transistor-Small Signal (<=1A) NPN High VoltageTape & Reel3,000TINNo

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