CMPDM202PH
2.3A,20V Surface mount MOSFET P-Channel Enhancement Mode High Current
Specifications
Case Type
SOT-23F
Common Source Input Capacitance (Ciss)
800 pF
Common Source Output Capacitance (Coss)
75 pF
Common Source Reverse Transfer Capacitance (Crss)
85 pF
Continuous Drain Current
2.3 A
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
15000 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.6 — 1.4 V
Gate-Drain Charge (Qgd)
3.5 nC
Gate-Source Charge (Qgs)
2 nC
Gate-Source Voltage (VGS)
12 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
9.2 A
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.088 Ω
Static Drain-Source On Resistance (rDS(ON))
0.093 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
12 nC
Turn Off Time (toff)
48 ns
Turn On Time (ton)
25 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 2.3A,20V Surface mount MOSFET P-Channel Enhancement Mode High Current | Box | 3,500 | PBFREE | |
| Discontinued | 2.3A,20V Surface mount MOSFET P-Channel Enhancement Mode High Current | Tape & Reel | 3,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| CMPDM202PH.PDF | Device Datasheet |
| Material Composition:SOT-23F | Material Composition |
| Package Detail Document:SOT-23F | Package Detail Document |
| Product EOL Notice:CMPDM202PH | Product EOL Notice |