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AEM

CMPDM7002AHC

1A,60V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
SOT-23
Common Source Input Capacitance (Ciss)
240 pF
Common Source Output Capacitance (Coss)
50 pF
Common Source Reverse Transfer Capacitance (Crss)
25 pF
Continuous Drain Current
1 A
Diode Forward On Voltage (VSD)
0.9 V
Drain-Gate Voltage
60 V
Drain-Source Breakdown Voltage (BVDSS)
63 V
Drain-Source Voltage
60 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
1.2 — 2.3 V
Gate-Drain Charge (Qgd)
0.7 nC
Gate-Source Charge (Qgs)
1 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
5 A
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
0.5 µA
Static Drain-Source On Resistance (rDS(ON))
0.22 Ω
Static Drain-Source On Resistance (rDS(ON))
0.3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Total Gate Charge (Qg)
2.3 nC
Turn Off Time (toff)
50 ns
Turn On Time (ton)
35 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active1A,60V Surface mount MOSFET N-Channel Enhancement ModeBox3,500PBFREE
Active1A,60V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel3,000TINNo

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